Development of travelling heater method for growth of detector grade CdZnTe single crystals

• Published in: Materials science in semiconductor processing Vol. 169; p. 107897
• Main Authors: Vijayakumar, P., Amaladass, Edward Prabu, Ganesan, K., Sarguna, R.M., Roy, Varsha, Ganesamoorthy, S.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-01-2024
• Subjects: CdZnTe; Gamma ray detector; I–V characteristics; Single crystal growth; Travelling heater method; I–V characteristics; Gamma ray detector; Travelling heater method; CdZnTe; Single crystal growth
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2023.107897

We report on the indigenous design and development of laboratory scale travelling heater method (THM) system to grow detector grade Cd0.9Zn0.1Te (CdZnTe) single crystals. THM system mainly consists of two-zone furnace with a tuneable temperature gradient (30–80 °C/cm), high precision translation (1–25 mm/day) and rotation (1–50 rpm) assemblies to meet the stringent conditions that are essential to grow detector grade CdZnTe single crystals. Further, a load cell in the THM system enables continuous monitoring of the growth. Systematic growth experiments were performed to optimize the various growth parameters in order to achieve large grain single crystals. Herein, the effect of temperature gradient and growth rate on the increase in grain size is discussed in detail. Each successful growth experiment yields a minimum of four detector grade elements of dimensions 10 × 10 × 5 mm3 from a starting charge of 100 g of CdZnTe. The crystalline nature and quality of the detector elements were evaluated using Laue, NIR transmission spectroscopy and I–V characteristics. Crystals with resistivity greater than ∼109 - 1010 Ω-cm were identified for testing gamma ray detection. The photo peak of 137Cs was resolved with an energy resolution of 4.2% at 662 keV and its measured electron mobility lifetime product is found to be ∼3.3 × 10−3 cm2/V. The demonstration of the gamma ray detection with a relatively high μτ product is the testimony to the successful growth of detector grade CdZnTe single crystals by an indigenously developed THM system.
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•Detector grade CdZnTe crystals are grown using indigeniously developed THM system.•Temperature gradient and growth rate are optimized for high quality crystals.•Atleast 4 detector elements of 10 × 10 × 5 mm3 obtained from 100 g of initial charge.•Indigenous developed CdZnTe detectors display energy resolution of 4.2 % at 662 keV.