Facility for simultaneous dual-beam ion implantation

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 551; no. 2; pp. 200 - 207
• Main Authors: Kaschny, J.R., Kögler, R., Tyrrof, H., Bürger, W., Eichhorn, F., Mücklich, A., Serre, C., Skorupa, W.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 11-10-2005
• Subjects: Ion beam synthesis; Ion implantation; Radiation effects; SiC; Simultaneous implantation; Radiation effects; Ion implantation; 61.72.−y; 61.80.−x; 85.40.Ry; Si; SiC; Ion beam synthesis; Simultaneous implantation
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2005.06.046

The dual implantation chamber (DIC) at Rossendorf Center for Application of Ion Beams in Materials Research allows materials to be implanted using two ion beams simultaneously. This facility is located at the 45
o cross point of two beam lines, one from a single-ended HVEE 500
kV ion implanter and the other from a HVEE 3
MV Tandetron accelerator. Each beam line is equipped with independent ion fluence and current control. The special design of the beam sweeping system, enables both ion beams to scan the target surface simultaneously in synchronous mode, i.e. both ion spots are kept at coincident positions over the target. Experiments, concerning the formation of SiC nanoclusters in Si by high-dose C and simultaneous Si implantation, are reported.