Influence of ion beam bombardment on characteristic of InGaN/GaN single quantum well grown by metal–organic chemical vapor deposition

• Published in: Journal of electroceramics Vol. 23; no. 2-4; pp. 180 - 184
• Main Authors: Choi, Seung-Kyu, Jang, Jae-Min, Yi, Sung-Hak, Kim, Jung-A, Jung, Woo-Gwang
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01-10-2009; Springer Nature B.V
• Subjects: Bombardment; Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Composites; Crystallography and Scattering Methods; Electrochemistry; Emissions; Gallium nitrides; Glass; Indium gallium nitrides; Ion beams; Materials Science; Natural Materials; Optical and Electronic Materials; Organic chemicals; Quantum wells; Sapphire; Spectral emittance; Single quantum well; Ion beam bombardment; GaN; InGaN; H; He; N
• ISSN: 1385-3449; 1573-8663
• DOI: 10.1007/s10832-007-9354-5

The influence of ion beam bombardment on sapphire substrate was investigated on the electrical and optical characteristics of Indium–Gallium–Nitride/Gallium–Nitride (InGaN/GaN) single quantum well (SQW) structure. Ion bombardment of N
+
, He
+
, H
+
ions were made on single crystal substrate of sapphire with dose of 1 × 10
14–17
ions/cm
2
. The InGaN/GaN SQW was fabricated on the ion beam bombarded sapphire substrate in two-flow Metal Organic Chemical Vapor Deposition (MOCVD) equipment. The thickness of InGaN/GaN SQW was about 20 nm and the composition of InGaN/GaN SQW was found to be In
0.1
Ga
0.9
N. In PL spectra, it is found that InGaN/GaN SQW was emitted from 441.1 to 446.6 nm (2.8–2.7 eV). The highest mobility value of 118 cm
2
/V–S and the lowest carrier concentration of 3.41 × 10
17
/cm
2
was found for N of 10
16
ions/cm
2
ion beam bombarded sample. The optimal condition for InGaN/GaN SQW on sapphire substrate of ion beam bombardment was deduced to be N
+
ion dose of 10
16
ions/cm
2
.