Atomic layer etching in close-to-conventional plasma etch tools
Atomic layer etching using plasma is a cyclical etching process of gas dosing and surface bombardment that removes material layer by layer, and has the potential to remove single atomic layers. The authors consider how a conventional plasma etcher can be modified to perform this style of recipe and...
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| Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 35; no. 1 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-01-2017
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| Online Access: | Get full text |
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| Summary: | Atomic layer etching using plasma is a cyclical etching process of gas dosing and surface bombardment that removes material layer by layer, and has the potential to remove single atomic layers. The authors consider how a conventional plasma etcher can be modified to perform this style of recipe and give results for silicon etching using a chlorine/argon plasma. The need for precise control of ion bombardment energy and gas dose is highlighted. |
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| ISSN: | 0734-2101 1520-8559 |
| DOI: | 10.1116/1.4972393 |