Low-temperature growth of nitrogen-doped BeTe and ZnSe/BeTe:N superlattices for delta doping

• Published in: Materials science in semiconductor processing Vol. 6; no. 5; pp. 511 - 514
• Main Authors: Kojima, K., Song, J.S., Godo, K., Oh, D.C., Chang, J.H., Cho, M.W., Yao, T.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-10-2003
• Subjects: Molecular beam epitaxy; Semiconducting II–VI materials; Molecular beam epitaxy; Semiconducting II–VI materials; 81.05.Dz; 66.10.Cb
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2003.07.030

We propose ZnSe/BeTe:N superlattice (SL) as a new p-type cladding layer with improved p-type dopability, in which nitrogen-doped BeTe (N-doped) layers are inserted into undoped ZnSe layers. We have optimized the growth temperature for ZnSe/BeTe:N SLs. Both equivalent beam pressure (BEP) ratio and growth rate are further optimized in low-temperature growth of BeTe:N layers. The structural properties of BeTe:N layers were analyzed by reflection high-energy electron diffraction and high-resolution X-ray diffraction. Electrical properties were evaluated by the van der Pauw method and capacitance–voltage (
C–
V) measurements. We achieve the net acceptor concentrations of 1.2×10
19
cm
−3 at the growth temperature of 350°C, BEP ratio of around 6, and growth rate of 35
nm/h.