A 409 GOPS/W Adaptive and Resilient Domino Register File in 22 nm Tri-Gate CMOS Featuring In-Situ Timing Margin and Error Detection for Tolerance to Within-Die Variation, Voltage Droop, Temperature and Aging
This paper presents an adaptive and resilient domino register file design featuring in-situ timing margin and error detection for the performance-critical domino read path. Voltage/frequency is adapted for slow-changing variations such as low-frequency supply noise, temperature fluctuation, and agin...
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Published in: | IEEE journal of solid-state circuits Vol. 51; no. 1; pp. 117 - 129 |
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Main Authors: | , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
IEEE
01-01-2016
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Subjects: | |
Online Access: | Get full text |
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Summary: | This paper presents an adaptive and resilient domino register file design featuring in-situ timing margin and error detection for the performance-critical domino read path. Voltage/frequency is adapted for slow-changing variations such as low-frequency supply noise, temperature fluctuation, and aging-induced degradation. Dynamic adaptation is combined with error detection and recovery for fast voltage droops and random data access patterns in the presence of within-die process variations. Throughput and energy efficiency gains are higher than the replica/canary based critical path approach. Timing margin is tracked by double-sampling the read output and its delayed version at the same clock edge. Timing errors are detected by double-sampling and comparing the read output within a clock window. The sensing errors in the precharge/evaluate domino read path are converted into timing errors using a conditional delayed-bitline precharge technique that does not impact the subsequent precharge operation. The proposed techniques incur 6-13% area overhead and 0.2-0.3% power overhead for a 4 Kb sub-array. The measurement results from a 22 nm tri-gate CMOS testchip demonstrate 21% throughput and 67% energy efficiency improvement with a peak energy efficiency of 409 GOPS/W. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2015.2463083 |