A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside th...

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Published in:IEEE journal of emerging and selected topics in power electronics Vol. 11; no. 2; pp. 1722 - 1736
Main Authors: Ma, Dingkun, Xiao, Guochun, Zhang, Tongyu, Yang, Fengtao, Zhu, Mengyu, Yuan, Tianshu, Ma, Liangjun, Gan, Yongmei, Wang, Laili
Format: Journal Article
Language:English
Published: Piscataway IEEE 01-04-2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Abstract This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside the module. The structural characteristics of the module realize the co-optimization of the switching performance, thermal management, and electromagnetic interference (EMI) issue of the multichip SiC module, which effectively solve the contradiction in the optimization of the electrical and thermal performance. In addition, by optimizing the process flow and designing a variety of soldering fixtures, the feasibility of the process and the engineering margin is increased. Experiments and simulations show that the proposed SiC power module has good electrical and thermal performance. The loop parasitic inductance is reduced to 2.02 nH and the common-mode (CM) current is eliminated. The drain-source voltage overshoot during the turn-off transient is reduced by 76.5%, and the voltage oscillation is significantly improved due to the integration of the decoupling circuit. At the same time, the integrated liquid-cooling heatsink greatly improves the cooling efficiency of the module on the premise of ensuring the insulation performance of the module.
AbstractList This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside the module. The structural characteristics of the module realize the co-optimization of the switching performance, thermal management, and electromagnetic interference (EMI) issue of the multichip SiC module, which effectively solve the contradiction in the optimization of the electrical and thermal performance. In addition, by optimizing the process flow and designing a variety of soldering fixtures, the feasibility of the process and the engineering margin is increased. Experiments and simulations show that the proposed SiC power module has good electrical and thermal performance. The loop parasitic inductance is reduced to 2.02 nH and the common-mode (CM) current is eliminated. The drain-source voltage overshoot during the turn-off transient is reduced by 76.5%, and the voltage oscillation is significantly improved due to the integration of the decoupling circuit. At the same time, the integrated liquid-cooling heatsink greatly improves the cooling efficiency of the module on the premise of ensuring the insulation performance of the module.
Author Yang, Fengtao
Ma, Dingkun
Xiao, Guochun
Zhang, Tongyu
Gan, Yongmei
Wang, Laili
Zhu, Mengyu
Yuan, Tianshu
Ma, Liangjun
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Snippet This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The...
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SubjectTerms Circuits
Cooling
Cooling systems
Decoupling
Decoupling capacitors
Electric potential
Electromagnetic interference
Electronic packaging
Fixtures
Heat sinks
Inductance
Insulation
integrated heatsink
Liquid cooling
Modules
Molybdenum
MOSFET
MOSFETs
Multichip modules
multichip packaging
Optimization
Packaging
Parasitics (electronics)
power module
Silicon carbide
silicon carbide (SiC) MOSFET
Switches
Thermal management
Voltage
Title A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances
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