A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances
This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside th...
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Published in: | IEEE journal of emerging and selected topics in power electronics Vol. 11; no. 2; pp. 1722 - 1736 |
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Main Authors: | , , , , , , , , |
Format: | Journal Article |
Language: | English |
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01-04-2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside the module. The structural characteristics of the module realize the co-optimization of the switching performance, thermal management, and electromagnetic interference (EMI) issue of the multichip SiC module, which effectively solve the contradiction in the optimization of the electrical and thermal performance. In addition, by optimizing the process flow and designing a variety of soldering fixtures, the feasibility of the process and the engineering margin is increased. Experiments and simulations show that the proposed SiC power module has good electrical and thermal performance. The loop parasitic inductance is reduced to 2.02 nH and the common-mode (CM) current is eliminated. The drain-source voltage overshoot during the turn-off transient is reduced by 76.5%, and the voltage oscillation is significantly improved due to the integration of the decoupling circuit. At the same time, the integrated liquid-cooling heatsink greatly improves the cooling efficiency of the module on the premise of ensuring the insulation performance of the module. |
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AbstractList | This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside the module. The structural characteristics of the module realize the co-optimization of the switching performance, thermal management, and electromagnetic interference (EMI) issue of the multichip SiC module, which effectively solve the contradiction in the optimization of the electrical and thermal performance. In addition, by optimizing the process flow and designing a variety of soldering fixtures, the feasibility of the process and the engineering margin is increased. Experiments and simulations show that the proposed SiC power module has good electrical and thermal performance. The loop parasitic inductance is reduced to 2.02 nH and the common-mode (CM) current is eliminated. The drain-source voltage overshoot during the turn-off transient is reduced by 76.5%, and the voltage oscillation is significantly improved due to the integration of the decoupling circuit. At the same time, the integrated liquid-cooling heatsink greatly improves the cooling efficiency of the module on the premise of ensuring the insulation performance of the module. |
Author | Yang, Fengtao Ma, Dingkun Xiao, Guochun Zhang, Tongyu Gan, Yongmei Wang, Laili Zhu, Mengyu Yuan, Tianshu Ma, Liangjun |
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Cites_doi | 10.1109/THERMINIC.2019.8923763 10.1109/TPEL.2021.3106316 10.1109/TPEL.2022.3141373 10.1109/IWIPP.2017.7936764 10.1109/TCPMT.2011.2171343 10.1109/TPEL.2014.2352863 10.1109/TPEL.2019.2934709 10.1109/TTE.2015.2426503 10.1109/MAPE.2015.7510412 10.1109/TPEL.2021.3074853 10.1109/MIE.2010.938722 10.1109/IWIPP.2015.7295992 10.1109/TPEL.2005.846548 10.1109/IWIPP.2019.8799077 10.1109/JESTPE.2019.2944138 10.1109/TIA.2010.2057401 10.1109/ECCE.2013.6646938 10.1109/TPEL.2018.2801336 10.1109/TPEL.2018.2828041 10.1109/ICHVE49031.2020.9279939 10.1109/TPEL.2017.2710483 10.1109/ECCE.2015.7310134 10.1109/IPEC.2010.5542158 10.1109/TIE.2017.2686365 10.1109/EPE.2016.7695571 10.1109/AERO.2004.1368048 10.1109/JESTPE.2018.2870248 10.1002/9780470611494.ch6 10.1016/j.jallcom.2018.11.251 10.1109/TPEL.2020.3046658 10.1016/j.matdes.2017.11.054 10.1109/TCPMT.2021.3106962 10.1109/APEC.2016.7467949 |
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Snippet | This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The... |
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SubjectTerms | Circuits Cooling Cooling systems Decoupling Decoupling capacitors Electric potential Electromagnetic interference Electronic packaging Fixtures Heat sinks Inductance Insulation integrated heatsink Liquid cooling Modules Molybdenum MOSFET MOSFETs Multichip modules multichip packaging Optimization Packaging Parasitics (electronics) power module Silicon carbide silicon carbide (SiC) MOSFET Switches Thermal management Voltage |
Title | A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances |
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