A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

• Published in: IEEE journal of emerging and selected topics in power electronics Vol. 11; no. 2; pp. 1722 - 1736
• Main Authors: Ma, Dingkun, Xiao, Guochun, Zhang, Tongyu, Yang, Fengtao, Zhu, Mengyu, Yuan, Tianshu, Ma, Liangjun, Gan, Yongmei, Wang, Laili
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01-04-2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuits; Cooling; Cooling systems; Decoupling; Decoupling capacitors; Electric potential; Electromagnetic interference; Electronic packaging; Fixtures; Heat sinks; Inductance; Insulation; integrated heatsink; Liquid cooling; Modules; Molybdenum; MOSFET; MOSFETs; Multichip modules; multichip packaging; Optimization; Packaging; Parasitics (electronics); power module; Silicon carbide; silicon carbide (SiC) MOSFET; Switches; Thermal management; Voltage
• ISSN: 2168-6777; 2168-6785
• DOI: 10.1109/JESTPE.2022.3210440

This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside the module. The structural characteristics of the module realize the co-optimization of the switching performance, thermal management, and electromagnetic interference (EMI) issue of the multichip SiC module, which effectively solve the contradiction in the optimization of the electrical and thermal performance. In addition, by optimizing the process flow and designing a variety of soldering fixtures, the feasibility of the process and the engineering margin is increased. Experiments and simulations show that the proposed SiC power module has good electrical and thermal performance. The loop parasitic inductance is reduced to 2.02 nH and the common-mode (CM) current is eliminated. The drain-source voltage overshoot during the turn-off transient is reduced by 76.5%, and the voltage oscillation is significantly improved due to the integration of the decoupling circuit. At the same time, the integrated liquid-cooling heatsink greatly improves the cooling efficiency of the module on the premise of ensuring the insulation performance of the module.