All regimes mobility extraction using split C–V technique enhanced with charge-sheet model

• Published in: Solid-state electronics Vol. 111; pp. 52 - 57
• Main Authors: Hubert, Q., Carmona, M., Rebuffat, B., Innocenti, J., Masson, P., Masoero, L., Julien, F., Lopez, L., Chiquet, P.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-09-2015
• Subjects: Charge-sheet model; Effective mobility extraction; Split C–V technique; Effective mobility extraction; Split C–V technique; Charge-sheet model
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2015.05.001

•Split C–V method is paired with charge-sheet model to extract effective mobility.•Effective mobility is extracted from weak to strong inversion.•Effective mobility is extracted from ohmic regime to saturation regime.•A non-zero and VDS independent effective mobility is observed in weak inversion.•Effective mobility extracted is modeled using simple empirical models.
In this paper, carrier effective mobility is accurately extracted from weak to strong inversion and from ohmic to saturation regimes by pairing the split C–V technique with charge-sheet model. In weak inversion, both electron and hole effective mobility are found to be constant and VDS independent. Moreover, effective mobility extracted by this new method is modeled in all regimes using already published models extended up to the saturation regime.