Annealing effect on properties of transparent and conducting ZnO thin films

• Published in: Thin solid films Vol. 517; no. 5; pp. 1572 - 1576
• Main Authors: Bouderbala, M., Hamzaoui, S., Adnane, M., Sahraoui, T., Zerdali, M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2009
• Subjects: Annealing; Electrical properties; Optical properties; Sputtering deposition; Structural properties; Zinc oxide; Zinc oxide; Annealing; Sputtering deposition; Electrical properties; Optical properties; Structural properties
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2008.09.089

This work presents the effect of postdeposition annealing on the structural, electrical and optical properties of undoped ZnO (zinc oxide) thin films, prepared by radio-frequency sputtering method. Two samples, 0.17 and 0.32 µm-thick, were annealed in vacuum from room temperature to 350 °C while another 0.32 µm-thick sample was annealed in air at 300 °C for 1 h. X-ray diffraction analysis revealed that all the films had a
c-axis orientation of the wurtzite structure normal to the substrate. Electrical measurements showed that the resistivity of samples annealed in vacuum decreased gradually with the increase of annealing temperature. For the 0.32 µm-thick sample, the gradual decrease of the resistivity was essentially due to a gradual increase in the mobility. On the other hand, the resistivity of the sample annealed in air increased strongly. The average transmission within the visible wavelength region for all films was higher than 80%. The band gap of samples annealed in vacuum increased whereas the band gap of the one annealed in air decreased. The main changes observed in all samples of this study were explained in terms of the effect of oxygen chemisorption and microstructural properties.