Improving the Performance of 110 GHz Membrane-Based Interconnects on Silicon: Modeling, Measurements, and Uncertainty Analysis
In this paper, we describe the development of broadband low-loss interconnects built-in membrane technology on different silicon substrates. We discuss the design of the test structures, which were fabricated and measured in a frequency range from 0.1 to 110 GHz, and present a detailed uncertainty a...
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| Published in: | IEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 3; no. 11; pp. 1938 - 1945 |
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| Format: | Journal Article |
| Language: | English |
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| Abstract | In this paper, we describe the development of broadband low-loss interconnects built-in membrane technology on different silicon substrates. We discuss the design of the test structures, which were fabricated and measured in a frequency range from 0.1 to 110 GHz, and present a detailed uncertainty analysis of the membrane coplanar waveguide (CPW) part. Using high-resistivity silicon as a carrier substrate for the membrane CPW, we obtain excellent agreement between the measurements and calculations of the propagation constant in the entire frequency range. The deviations between the measurements and calculations fall within the bounds predicted by the uncertainty analysis. |
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| AbstractList | In this paper, we describe the development of broadband low-loss interconnects built-in membrane technology on different silicon substrates. We discuss the design of the test structures, which were fabricated and measured in a frequency range from 0.1 to 110 GHz, and present a detailed uncertainty analysis of the membrane coplanar waveguide (CPW) part. Using high-resistivity silicon as a carrier substrate for the membrane CPW, we obtain excellent agreement between the measurements and calculations of the propagation constant in the entire frequency range. The deviations between the measurements and calculations fall within the bounds predicted by the uncertainty analysis. In this paper, we describe the development of broadband low-loss interconnects built-in membrane technology on different silicon substrates. We discuss the design of the test structures, which were fabricated and measured in a frequency range from 0.1 to 110 GHz, and present a detailed uncertainty analysis of the membrane coplanar waveguide (CPW) part. Using high-resistivity silicon as a carrier substrate for the membrane CPW, we obtain excellent agreement between the measurements and calculations of the propagation constant in the entire frequency range. The deviations between the measurements and calculations fall within the bounds predicted by the uncertainty analysis. [PUBLICATION ABSTRACT] |
| Author | Rohland, Martina Buttgenbach, Stephanus Arz, Uwe |
| Author_xml | – sequence: 1 givenname: Uwe surname: Arz fullname: Arz, Uwe email: uwe.arz@ptb.de organization: Phys.-Tech. Bundesanstalt, Braunschweig, Germany – sequence: 2 givenname: Martina surname: Rohland fullname: Rohland, Martina email: martina.rohland@ptb.de organization: Phys.-Tech. Bundesanstalt, Braunschweig, Germany – sequence: 3 givenname: Stephanus surname: Buttgenbach fullname: Buttgenbach, Stephanus email: s.buettgenbach@tu-bs.de organization: Inst. for Microtechnol., Tech. Univ. Braunschweig, Braunschweig, Germany |
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| Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Nov 2013 |
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| References | ref12 ref14 ref11 ref10 ref2 ref1 ref17 ref16 ridler (ref18) 2008 (ref15) 2010 ref7 ref9 ref4 ref3 (ref8) 2012 (ref13) 2008; 101 ref5 arz (ref6) 2011 |
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| SubjectTerms | Conductors Coplanar waveguide (CPW) Coplanar waveguides Fabrication interconnect membrane technology on-wafer measurement Silicon Substrates Uncertainty |
| Title | Improving the Performance of 110 GHz Membrane-Based Interconnects on Silicon: Modeling, Measurements, and Uncertainty Analysis |
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