Improving the Performance of 110 GHz Membrane-Based Interconnects on Silicon: Modeling, Measurements, and Uncertainty Analysis

In this paper, we describe the development of broadband low-loss interconnects built-in membrane technology on different silicon substrates. We discuss the design of the test structures, which were fabricated and measured in a frequency range from 0.1 to 110 GHz, and present a detailed uncertainty a...

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Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 3; no. 11; pp. 1938 - 1945
Main Authors: Arz, Uwe, Rohland, Martina, Buttgenbach, Stephanus
Format: Journal Article
Language:English
Published: Piscataway IEEE 01-11-2013
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:In this paper, we describe the development of broadband low-loss interconnects built-in membrane technology on different silicon substrates. We discuss the design of the test structures, which were fabricated and measured in a frequency range from 0.1 to 110 GHz, and present a detailed uncertainty analysis of the membrane coplanar waveguide (CPW) part. Using high-resistivity silicon as a carrier substrate for the membrane CPW, we obtain excellent agreement between the measurements and calculations of the propagation constant in the entire frequency range. The deviations between the measurements and calculations fall within the bounds predicted by the uncertainty analysis.
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2013.2271864