Sensitivity Analysis on Dielectric Modulated Ge-Source DMDG TFET Based Label-Free Biosensor

• Published in: IEEE transactions on nanotechnology Vol. 20; pp. 552 - 560
• Main Authors: Saha, Rajesh, Hirpara, Yash, Hoque, Shanidul
• Format: Journal Article
• Language: English
• Published: New York IEEE 2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Biomolecules; Biosensors; CAD; cavity; Comparative studies; Computer aided design; Dielectrics; Field effect transistors; Ge-source DMDG TFET; Germanium; Indium arsenides; Logic gates; Molecular biophysics; Response time; Semiconductor devices; Sensitivity; Sensitivity analysis; Silicon; TFETs; Tunnel junctions; Tunneling
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2021.3093927

This work compares the performance of dielectric modulated (DM) based Ge-source dual material double gate (DMDG) Tunnel Field Effect Transistor (TFET) and conventional (C)-DMDG-TFET as label free biosensor through Technology Computer Aided Design (TCAD) simulator. Here, cavity is introduced both at source and drain sides of the fixed HfO 2 dielectric to increase the capture area of biosensors. Sensitivity (S n ) is extracted for both neutral and charged (positive/negative) biomolecules considering cavity is fully filled with different dielectric materials (k). We have reported the sensitivity with the variation in height of nanogap cavity (h bio ) for neutral biomolecules in the cavity. The sensitivity of Ge-source DMDG-TFET is found higher than C-DMDG-TFET due to more conduction at the tunnel junction. Also, the subthreshold swing (SS), transfer characteristics, and I ON /I OFF ratio of these biosensors are reported for different k and h bio considering neutral/charged biomolecules. The sensitivity of partially filled nanogaps with biomolecules like decreasing, increasing, concave, and convex step profiles are reported for both the biosensors. The dynamic range (DR) of both the biosensors are extracted in presence of positive and negative charged biomolecules. The response time of Ge-source DMDG-TFET is reported at different k. A comparative study of proposed biosensor with other reported work is discussed. Finally, the sensitivity is extracted for DMDG-TFET considering other source material like GaAs, InAs, Si-Ge hetero stacked (HS), GaAs-InAs HS.