Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

The authors propose a Ge∕Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a “clean” offset of 150meV situated below other energy valleys (Γ,X). The entire structure is strain-free because the lattice-matched Ge and Ge0.76Si0.19Sn0....

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Bibliographic Details

Published in:	Applied physics letters Vol. 90; no. 25
Main Authors:	Sun, G., Cheng, H. H., Menéndez, J., Khurgin, J. B., Soref, R. A.
Format:	Journal Article
Language:	English
Published:	18-06-2007
Online Access:	Get full text
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