Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

The authors propose a Ge∕Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a “clean” offset of 150meV situated below other energy valleys (Γ,X). The entire structure is strain-free because the lattice-matched Ge and Ge0.76Si0.19Sn0....

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Bibliographic Details
Published in:Applied physics letters Vol. 90; no. 25
Main Authors: Sun, G., Cheng, H. H., Menéndez, J., Khurgin, J. B., Soref, R. A.
Format: Journal Article
Language:English
Published: 18-06-2007
Online Access:Get full text
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Summary:The authors propose a Ge∕Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a “clean” offset of 150meV situated below other energy valleys (Γ,X). The entire structure is strain-free because the lattice-matched Ge and Ge0.76Si0.19Sn0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2749844