Atomically flat (110) SrTiO3 and heteroepitaxy

Atomically flat (110) SrTiO3 and heteroepitaxy

We have prepared an atomically flat and insulating (110) SrTiO3 surface by annealing at high temperature under varying oxygen partial pressure. At low pressure, the polar surface is stabilized by oxygen vacancies, resulting in an atomically flat surface characterized by (110) unit-cell steps. The va...

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Bibliographic Details
Published in:Applied physics letters Vol. 86; no. 17
Main Authors: Mukunoki, Y., Nakagawa, N., Susaki, T., Hwang, H. Y.
Format: Journal Article
Language:English
Published: 25-04-2005
Online Access:Get full text
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Summary:We have prepared an atomically flat and insulating (110) SrTiO3 surface by annealing at high temperature under varying oxygen partial pressure. At low pressure, the polar surface is stabilized by oxygen vacancies, resulting in an atomically flat surface characterized by (110) unit-cell steps. The vacancies can be filled while maintaining this surface structure, providing an atomically ideal (110) substrate. We demonstrate two-dimensional homoepitaxial and heteroepitaxial growth, establishing the potential of this growth orientation for controlling interface states arising from polarity discontinuities in perovskite heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1920415