Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires

• Published in: Applied physics letters Vol. 89; no. 18
• Main Authors: Voss, T., Bekeny, C., Wischmeier, L., Gafsi, H., Börner, S., Schade, W., Mofor, A. C., Bakin, A., Waag, A.
• Format: Journal Article
• Language: English
• Published: 30-10-2006
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2364146

Room-temperature near-band-edge photoluminescence of ZnO is composed of contributions from free-exciton recombination and its longitudinal-optical phonon replica. By tracking the photoluminescence of ZnO nanowires from 4K up to room temperature, the authors show that the relative contributions of these emission lines show a strong variation for samples grown under different conditions. The varying coupling strengths of the excitons and phonons thus lead to a significant shift of the energy position of the room-temperature photoluminescence. They verify that this is not caused by laser heating or stress/strain but is most probably related to crystalline imperfections in the surface region.