Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, Cytop™ and polystyrene. The picene FETs operated in low absolute gate voltage |VG| below 15 V for Cytop™ coated SiO2 and 30 V for polystyrene coate...

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Bibliographic Details
Published in:Applied physics letters Vol. 95; no. 18
Main Authors: Kaji, Yumiko, Kawasaki, Naoko, Lee, Xuesong, Okamoto, Hideki, Sugawara, Yasuyuki, Oikawa, Shohei, Ito, Akio, Okazaki, Hiroyuki, Yokoya, Takayoshi, Fujiwara, Akihiko, Kubozono, Yoshihiro
Format: Journal Article
Language:English
Published: 02-11-2009
Online Access:Get full text
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Summary:Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, Cytop™ and polystyrene. The picene FETs operated in low absolute gate voltage |VG| below 15 V for Cytop™ coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ∼10 ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2/picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3257373