Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is a promising candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fully fabricated by industrial CMOS standards is difficult without intermediate solution...

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Bibliographic Details
Published in:npj quantum information Vol. 9; no. 1; pp. 107 - 7
Main Authors: Klemt, Bernhard, Elhomsy, Victor, Nurizzo, Martin, Hamonic, Pierre, Martinez, Biel, Cardoso Paz, Bruna, Spence, Cameron, Dartiailh, Matthieu C., Jadot, Baptiste, Chanrion, Emmanuel, Thiney, Vivien, Lethiecq, Renan, Bertrand, Benoit, Niebojewski, Heimanu, Bäuerle, Christopher, Vinet, Maud, Niquet, Yann-Michel, Meunier, Tristan, Urdampilleta, Matias
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 23-10-2023
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Summary:For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is a promising candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fully fabricated by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL), functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proofs-of-concept. Once the process is established, it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric fields and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.
ISSN:2056-6387
2056-6387
DOI:10.1038/s41534-023-00776-8