A low-voltage micropower JFET/bipolar operational amplifier

A low-voltage micropower JFET/bipolar operational amplifier

A single cell supply (operable down to 1.2 V) micropower operational amplifier using compatible low pinchoff voltage JFET's (V/SUB p/=0.4 V) in conjunction with standard bipolar technology has been developed. The subvolt pinchoff JFET's have proved useful in the common-mode feedback-assist...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits Vol. 16; no. 6; pp. 669 - 676
Main Authors: Malhi, S.D.S., Salama, C.A.T., Donnison, W.R.
Format: Journal Article
Language:English
Published: IEEE 01-12-1981
Subjects:
Boron
Electrons
Fabrication
Fluctuations
Implants
Operational amplifiers
Performance gain
Power dissipation
Student members
Voltage
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Description
Summary:A single cell supply (operable down to 1.2 V) micropower operational amplifier using compatible low pinchoff voltage JFET's (V/SUB p/=0.4 V) in conjunction with standard bipolar technology has been developed. The subvolt pinchoff JFET's have proved useful in the common-mode feedback-assisted biasing of a simple p-n-p input stage to permit single supply operation, the design of a low-voltage high-performance current mirror and a differential to single-ended converter. The amplifier exhibits excellent ac performance (unity gain slew rate=0.25 V//spl mu/s, unity gain bandwidth=850 kHz) with low power dissipation (245 /spl mu/W).
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1981.1051660