Band engineering of magnetic (Ga,Mn)As semiconductors by phosphorus doping

• Published in: IEEE transactions on magnetics Vol. 59; no. 11; p. 1
• Main Authors: Yastrubchak, Oksana, Riney, Logan, Powers, William, Tataryn, Nataliia, Mamykin, Sergii, Kondratenko, Olga, Romanyuk, Volodymyr, Borkovska, Lyudmyla, Kolomys, Oleksandr, Khomenkova, Larysa, Wang, Jiashu, Liu, Xinyu, Furdyna, Jacek K., Assaf, Badih A.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-11-2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: band structure; Band structures; Banded structure; Charge density; Crystal lattices; dilute ferromagnetic semiconductors; Energy bands; Epitaxial growth; Fermi level; Gallium arsenide; Interstitial impurities; Low temperature; Magnetic properties; Magnetic semiconductors; Magnetism; Manganese; Molecular beam epitaxy; Optical films; spintronics; spin–orbit coupling; Substrates; Temperature measurement; Valence band
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.2023.3287730

Impact of P and Mn incorporation into GaAs layers on their electronic and band structures as well as magnetic and structural properties has been studied. A set of the homogenous (Ga,Mn)(P,As) layers with 8% of Mn and 0-27% of P contents of high structural perfection have been grown by low-temperature molecular-beam epitaxy. Embedding P ions into the GaAs crystal lattice leads to an increase in the band gap, while Mn impurities lead to its decrease. A significant impact of Mn interstitial impurities on the structural and magnetic properties of the films was observed. We observe an enhancement of charge density in the presence of Mn. Higher energy interband transitions involving energy band structure that includes the split-off valence band and the L-point bands remained nearly unchanged.