Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties

• Published in: Applied physics letters Vol. 71; no. 11; pp. 1516 - 1518
• Main Authors: Fierling, G., Buchheit, M., Letartre, X., Gendry, M., Viktorovitch, P., Sidoroff, F., Lainé, J. P.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 15-09-1997
• Subjects: Engineering Sciences; Materials; Micro and nanotechnologies; Microelectronics; Optics; Photonic; Optoelectronic devices; Optoelectronic properties; Electronic bandstructure; Photoluminescence
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.119953

The mechanical relaxation of strained semiconducting stripes is studied. The deformation tensor is calculated using a classical approach of elasticity problem with predeformations; the electronic band structure is then simulated using an 8 band kp model including strain. To confirm the models developed, compressively and tensely strained stripes were fabricated and characterized by photoluminescence measurements. Theoretical and experimental results are in very good agreement and show the importance of mechanical anisotropic relaxation phenomena in optoelectronic devices like waveguide structures, modulators, or lasers.