Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

• Published in: Applied physics letters Vol. 82; no. 13; pp. 2172 - 2174
• Main Authors: Armigliato, A., Balboni, R., Carnevale, G. P., Pavia, G., Piccolo, D., Frabboni, S., Benedetti, A., Cullis, A. G.
• Format: Journal Article
• Language: English
• Published: 31-03-2003
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1565181

A method of obtaining quantitative two-dimensional (2D) maps of strain by the convergent beam electron diffraction technique in a transmission electron microscope is described. It is based on the automatic acquisition of a series of diffraction patterns generated from digital rastering the electron spot in a matrix of points within a selected area of the sample. These patterns are stored in a database and the corresponding strain tensor at each point is calculated, thus yielding a 2D strain map. An example of application of this method to cross-sectioned cells fabricated for the 0.15 μm technology of flash memories is reported.