Laterally coupled DBR laser emitting at 1.55 μm fabricated by focused ion beam lithography

By using focused ion beam lithography high performance 1.55-μm emitting distributed Bragg reflector lasers were realized suitable for high-speed optical telecommunication. Threshold currents of 8 mA and continuous-wave efficiencies of 0.37 W/A for 600-μm-long devices were achieved. Stable single-mod...

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Bibliographic Details
Published in:	IEEE photonics technology letters Vol. 14; no. 8; pp. 1037 - 1039
Main Authors:	Bach, L., Rennon, S., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.
Format:	Journal Article
Language:	English
Published:	IEEE 01-08-2002
Subjects:	Bragg reflectors DBR lasers Distributed Bragg reflectors Emittance Frequency estimation High speed High speed optical techniques Ion beams Laser noise Lithography Modulation Noise levels Optical coupling Optical modulation Particle beam optics Stimulated emission
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Summary:	By using focused ion beam lithography high performance 1.55-μm emitting distributed Bragg reflector lasers were realized suitable for high-speed optical telecommunication. Threshold currents of 8 mA and continuous-wave efficiencies of 0.37 W/A for 600-μm-long devices were achieved. Stable single-mode emission with sidemode suppression ratios of > 40 dB were observed for the entire operation range. By relative intensity noise measurements an intrinsic 3-dB modulation frequency of > 10 GHz was estimated for a single-mode output power of 23 mW.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2002.1021961