Detection of stacking faults in 6H-SiC by Raman scattering

Detection of stacking faults in 6H-SiC by Raman scattering

Raman spectra of 6H-SiC crystals including stacking faults have been examined for the c face using backscattering geometry. The intensity of the transverse optical phonon band at 796 cm−1, which corresponds to the phonon mode at the Γ point in 3C-SiC, is sensitive to the stacking faults. We found th...

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Bibliographic Details
Published in:Applied physics letters Vol. 77; no. 22; pp. 3612 - 3614
Main Authors: Nakashima, S., Nakatake, Y., Harima, H., Katsuno, M., Ohtani, N.
Format: Journal Article
Language:English
Published: 27-11-2000
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Summary:Raman spectra of 6H-SiC crystals including stacking faults have been examined for the c face using backscattering geometry. The intensity of the transverse optical phonon band at 796 cm−1, which corresponds to the phonon mode at the Γ point in 3C-SiC, is sensitive to the stacking faults. We found that the intensity of this band depends on the stacking fault density. This is explained based on the bond polarizability model. The spatial distribution of the stacking faults is studied by Raman image measurement.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1329629