Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling

• Published in: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 16; no. 3; pp. 1654 - 1657
• Main Authors: Leng, J., Opsal, J., Chu, H., Senko, M., Aspnes, D. E.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: 01-05-1998
• Subjects: Si; Ge
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/1.581137

Various representations of the dielectric functions of semiconducting materials have been proposed. We compare five different models for representing the dielectric functions of crystalline
(c-)
Si, amorphous
(a-)
Si, and
c
-Ge from 1.5 to 6.0 eV. The four-oscillator critical point with parity plus one-dimensional tight-binding model (CPP-1D) best represents
c
-Si. Different models best represent
a
-Si and
c
-Ge. These representations provided a basis for modeling variations encountered in semiconductor manufacturing.