SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING

SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING

The experimentally observed distributions of surface state density versus energy is correlated with the existence of coulombic centers in the oxide. Single charges give rise to peaks in surface state density close to the band edges, deeper levels are introduced by two charges in close proximity.

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Bibliographic Details
Published in:Applied physics letters Vol. 12; no. 3; pp. 95 - 97
Main Authors: Goetzberger, A., Heine, V., Nicollian, E. H.
Format: Journal Article
Language:English
Published: 01-02-1968
Online Access:Get full text
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Description
Summary:The experimentally observed distributions of surface state density versus energy is correlated with the existence of coulombic centers in the oxide. Single charges give rise to peaks in surface state density close to the band edges, deeper levels are introduced by two charges in close proximity.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1651913