Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs

Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs

GaAs, Al0.35Ga0.65As, and AlAs surface terrace structures formed during metalorganic vapor phase epitaxy (MOVPE) on vicinal (001) surfaces are investigated. The minimal terrace width for two-dimensional (2-D) nucleation for AlGaAs is almost equal to that for GaAs. In contrast, for AlAs it is reduced...

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Bibliographic Details
Published in:Applied physics letters Vol. 65; no. 11; pp. 1418 - 1420
Main Authors: Shinohara, Masanori, Tanimoto, Masafumi, Yokoyama, Haruki, Inoue, Naohisa
Format: Journal Article
Language:English
Published: 12-09-1994
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Summary:GaAs, Al0.35Ga0.65As, and AlAs surface terrace structures formed during metalorganic vapor phase epitaxy (MOVPE) on vicinal (001) surfaces are investigated. The minimal terrace width for two-dimensional (2-D) nucleation for AlGaAs is almost equal to that for GaAs. In contrast, for AlAs it is reduced and the growth mode becomes three dimensional at temperatures below 580 °C. Monolayer step-flow growth without 2-D islands and terraces about 1 μm wide are obtained above 630 °C for all materials. These results are very different from those by molecular beam epitaxy and suggest that MOVPE is superior to grow wide uniform heterointerfaces for GaAs/AlAs and GaAs/AlGaAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112069