Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

• Published in: IEEE transactions on nuclear science Vol. 63; no. 4; pp. 1995 - 2001
• Main Authors: Khachatrian, Ani, Roche, Nicolas J-H, Buchner, Stephen P., Koehler, Andrew D., Greenlee, Jordan D., Anderson, Travis J., Warner, Jeffrey H., McMorrow, Dale
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-08-2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum gallium nitride; Charge generation; Gallium nitride; GaN; HEMT; HEMTs; laser testing; Logic gates; MODFETs; single-event transients; single-photon absorption; Transient analysis; Wide band gap semiconductors
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2016.2588886

Carrier injection by single-photon absorption using ultraviolet optical pulses is used to investigate single-event transients in pristine and proton-irradiated AlGaN/GaN HEMTs. High-precision spatial mapping of defects and traps in AlGaN/GaN HEMT devices identify regions of enhanced SET signals, or "hot spots" that are ascribed to the presence of lattice defects that modify the electric field in the structure. The resulting transient shape and amplitude depend strongly on the specific location of the injected carriers, and vary with changes in gate and drain bias. Proton irradiation significantly alters transient signal shapes, increases the integrated collected charge, and increases density of defects and traps.