Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

• Published in: IEEE transactions on electron devices Vol. 66; no. 6; pp. 2538 - 2543
• Main Authors: Huang, Shih-En, Yu, Chien-Lin, Su, Pin
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-06-2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Capacitance; CMOS; Computer simulation; FinFET; FinFETs; Indium gallium arsenide; InGaAs; Logic gates; Mathematical model; Mathematical models; negative-capacitance field-effect transistor (NCFET); Numerical models; Quantum capacitance; quantum confinement (QC); Sensitivity; Threshold voltage
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2019.2907994

This paper investigates the fin-width (<inline-formula> <tex-math notation="LaTeX">\text{W}_{\textsf {Fin}} </tex-math></inline-formula>) sensitivity of threshold voltage (<inline-formula> <tex-math notation="LaTeX">\text{V}_{\textsf {T}} </tex-math></inline-formula>) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller <inline-formula> <tex-math notation="LaTeX">\text{V}_{\textsf {T}} </tex-math></inline-formula> sensitivity to <inline-formula> <tex-math notation="LaTeX">\text{W}_{\textsf {Fin}} </tex-math></inline-formula> than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the <inline-formula> <tex-math notation="LaTeX">\text{V}_{\textsf {T}} </tex-math></inline-formula> sensitivity to <inline-formula> <tex-math notation="LaTeX">\text{W}_{\textsf {Fin}} </tex-math></inline-formula> for NC-FinFETs. Our study may provide insights for future scaling of FinFETs.