Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification

• Published in: IEEE electron device letters Vol. 39; no. 10; pp. 1528 - 1531
• Main Author: Hekmatshoar, Bahman
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-10-2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous silicon; Fabrication; Field effect transistors; Flicker; Heterojunctions; Hydrogenation; Logic gates; Oscilloscopes; plasma CVD; polysilicon; Semiconductor devices; Silicon; Silicon substrates; Stability; Substrates; Thermal stability; Thin films; Thin-film transistors; Transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2018.2868176

Thin-film heterojunction field-effect transistor (HJFET) devices with hydrogenated amorphous Si gate and hydrogenated poly-Si source and drain regions are demonstrated on small-grain poly-Si substrates. The transistor fabrication process (excluding poly-Si preparation) temperature is below ~200 °C. The HJFET devices enable lower operation voltages, steeper subthreshold characteristics, lower flicker noise, and higher stability than conventional poly-Si devices. A low-power HJFET amplifier suitable for capacitive reading of biological signals is also demonstrated.