Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates

• Published in: Applied physics letters Vol. 76; no. 8; pp. 985 - 987
• Main Authors: Schowalter, L. J., Shusterman, Y., Wang, R., Bhat, I., Arunmozhi, G., Slack, G. A.
• Format: Journal Article
• Language: English
• Published: 21-02-2000
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.125914

High quality epitaxial AlN and AlxGa1−xN layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report the characterization of these layers using Rutherford backscattering/ion channeling spectroscopy, atomic force microscopy, double crystal x-ray diffraction, and preliminary electrical results. Ion channeling along the [112̄0] axis gave a minimum yield of 1.5% for an AlN layer and 2.2% for an Al0.5Ga0.5N, indicating excellent crystal quality. A resistivity of 20 Ω cm and a mobility of 20 cm2/V s was measured in a Si-doped, 1-μm-thick Al0.5Ga0.5N grown epitaxially on the AlN substrates.