Modification of electronic and chemical structure at metal/CdTe interfaces by pulsed laser annealing

• Published in: Journal of electronic materials Vol. 17; no. 2; pp. 149 - 153
• Main Authors: SHAW, J. L, VITURRO, R. E, BRILLSON, L. J, KILDAY, D, MARGARITONDO, G
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01-03-1988
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Metals, semimetals and alloys; Metals. Metallurgy; Physics; Specific materials; Surface and interface electron states; Band structure; Annealing; Photoluminescence; Cathodoluminescence; Experimental study; Surface; Electronic structure; Chemical shift; Semimetal; Laser pulse; Fermi level; Chemical reaction; Semiconductor metal contact; Cadmium Tellurium; Photoelectron spectrometry; Interface; Core level
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/BF02652145

The authors have measured the effects of metallization and thermal processing on the chemical interaction, band bending, and deep level formation at Au and In/CdTe interfaces using soft x-ray photoemission, photoluminescence, cathodoluminescence, and surface photovoltage spectroscopies. Metallization and laser processing induce major increases in the intensity of several deep photoluminescence transitions. Core level shifts and cathodoluminescence spectra show Fermi level movements characteristic of both a classical work function model and chemically-induced defect pinning. Both interfaces displayed staged Fermi level movements with the evolving metal-semiconductor interaction. Intermediate and final Fermi energies for both systems correlated with the energies of the processing-enhanced photoluminescence transitions, suggesting that the states associated with these transitions are determining the Fermi level.