Electrical property measurements of Cr-N codoped TiO2 epitaxial thin films grown by pulsed laser deposition

• Published in: Applied physics letters Vol. 102; no. 17
• Main Authors: Jaćimović, J., Gaál, R., Magrez, A., Forró, L., Regmi, M., Eres, Gyula
• Format: Journal Article
• Language: English
• Published: United States 29-04-2013
• Subjects: co-doped; PLD; TiO2
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4804240

The temperature dependent resistivity and thermo-electric power of Cr-N codoped TiO2 were compared with that of single element N and Cr doped and undoped TiO2 using epitaxial anatase thin films grown by pulsed laser deposition on (100) LaAlO3 substrates. The resistivity plots and especially the thermoelectric power data confirm that codoping is not a simple sum of single element doping. However, the negative sign of the Seebeck coefficient indicates electron dominated transport independent of doping. The narrowing distinction among the effects of different doping methods combined with increasing resistivity of the films with improving crystalline quality of TiO2 suggest that structural defects play a critical role in the doping process.