Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure
p-GaN/u-GaN alternating-layer nanostructures are grown with molecular beam epitaxy to show a low p-type resistivity level of 0.038 Ω-cm. The obtained low resistivity is due to the high hole mobility in the u-GaN layers, which serve as effective transport channels of holes diffused from the neighbori...
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Published in: | IEEE transactions on electron devices Vol. 64; no. 1; pp. 115 - 120 |
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Main Authors: | , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
New York
IEEE
01-01-2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects: | |
Online Access: | Get full text |
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Summary: | p-GaN/u-GaN alternating-layer nanostructures are grown with molecular beam epitaxy to show a low p-type resistivity level of 0.038 Ω-cm. The obtained low resistivity is due to the high hole mobility in the u-GaN layers, which serve as effective transport channels of holes diffused from the neighboring p-GaN layers. The Mg doping in a thin p-GaN layer can lead to a high Mg-doping concentration for supplying holes to the neighboring u-GaN layers. Simulations based on a 1-D drift diffusion charge control model and the Brooks-Herring theory of ionized impurity scattering are undertaken to first obtain the depth-dependent distributions of hole concentration, mobility, and, hence, resistivity. Then, weighted averaging processes are used for evaluating the effective hole concentration, mobility, and resistivity of a p-GaN/u-GaN alternating-layer nanostructure to give consistent results with the measured data. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2016.2631148 |