Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

p-GaN/u-GaN alternating-layer nanostructures are grown with molecular beam epitaxy to show a low p-type resistivity level of 0.038 Ω-cm. The obtained low resistivity is due to the high hole mobility in the u-GaN layers, which serve as effective transport channels of holes diffused from the neighbori...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 64; no. 1; pp. 115 - 120
Main Authors: Hao-Tsung Chen, Chia-Ying Su, Charng-Gan Tu, Yu-Feng Yao, Chun-Han Lin, Yuh-Renn Wu, Yean-Woei Kiang, Yang, Chih-Chung C. C.
Format: Journal Article
Language:English
Published: New York IEEE 01-01-2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:p-GaN/u-GaN alternating-layer nanostructures are grown with molecular beam epitaxy to show a low p-type resistivity level of 0.038 Ω-cm. The obtained low resistivity is due to the high hole mobility in the u-GaN layers, which serve as effective transport channels of holes diffused from the neighboring p-GaN layers. The Mg doping in a thin p-GaN layer can lead to a high Mg-doping concentration for supplying holes to the neighboring u-GaN layers. Simulations based on a 1-D drift diffusion charge control model and the Brooks-Herring theory of ionized impurity scattering are undertaken to first obtain the depth-dependent distributions of hole concentration, mobility, and, hence, resistivity. Then, weighted averaging processes are used for evaluating the effective hole concentration, mobility, and resistivity of a p-GaN/u-GaN alternating-layer nanostructure to give consistent results with the measured data.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2631148