Electrical properties and formation mechanism of porous silicon carbide
Variation of the preparation conditions of porous silicon carbide is shown to have a strong effect on the structural and electrical properties of the material obtained. A correlation has been observed between the fiber size and resistivity of porous SiC, a decrease of fiber size results in a semi-in...
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| Published in: | Applied physics letters Vol. 65; no. 21; pp. 2699 - 2701 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
21-11-1994
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| Online Access: | Get full text |
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| Summary: | Variation of the preparation conditions of porous silicon carbide is shown to have a strong effect on the structural and electrical properties of the material obtained. A correlation has been observed between the fiber size and resistivity of porous SiC, a decrease of fiber size results in a semi-insulating material due to Fermi-level pinning to surface states. A model is proposed for the mechanism of fiber size self-regulation responsible for the porous material formation. The model relates the blocking of the fiber dissolution process to the increase of resistivity in a thin fiber due to Fermi-level pinning. We suggest that the Fermi-level pinning model is also applicable to the formation mechanism of porous silicon. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.112610 |