Complementary Magnetic Tunnel Junction Logic

• Published in: IEEE transactions on electron devices Vol. 61; no. 4; pp. 1207 - 1210
• Main Authors: Friedman, Joseph S., Sahakian, Alan V.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-04-2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Beyond CMOS computing; CMOS integrated circuits; Junctions; Logic gates; magnetic tunnel junction (MTJ); Magnetic tunneling; Magnetization; non-von Neumann architecture; spintronic logic; Switches; Wires
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2014.2306395

This brief proposes and analyzes a novel logic family composed solely of magnetic tunnel junctions (MTJs) to form complimentary pull-up and pull-down networks. This logic family solves the challenge of direct cascading in spintronic logic circuits while also providing non-volatile data storage. The increased logic density possible with complementary MTJs coupled with a charge pulse switching mechanism driven by ferromagnet polarization permits highly efficient logical computation. Furthermore, the presence of non-volatile memory within the logic structure provides a feasible hardware for non-von Neumann computer architectures.