Polymer Thin Film Memtransistors Based on Ion-Carrier Exchange Heterojunction

• Published in: IEEE electron device letters Vol. 42; no. 10; pp. 1528 - 1531
• Main Authors: Wu, Jia-Ling, Zhang, Zhong-Da, Huang, Hai-Tian, Gao, Xu, Xu, Jian-Long, Wang, Sui-Dong
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-10-2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bilayers; Conductivity; electrochemical doping; Electrodes; heterojunction; Heterojunctions; Ions; Polymer films; polymer memristors; Polymer memtransistors; Polymers; Silicon; Thin films; Voltage measurement
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2021.3103774

Polymer thin film memtransistors were realized with a solution-processed bilayer structure, which manifested as the ion-carrier exchange heterojunction. The temporal and spatial evolution of the ion-carrier exchange in the devices resulted in the memristive characteristics in both vertical and horizontal directions, and the effective horizontal conductivity could be several orders higher than the vertical one. The device features may pave a promising way for emulating synaptic interactions based on a polymer functional thin film.