Measurement and analysis of carrier distribution and lifetime in fast switching power rectifiers

• Published in: IEEE transactions on electron devices Vol. 27; no. 7; pp. 1217 - 1222
• Main Authors: Houston, D.E., Adler, M.S., Wolley, E.D.
• Format: Journal Article
• Language: English
• Published: IEEE 01-07-1980
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1980.20011

Charge distributions in fast switching rectifiers are measured by free-carrier infrared absorption in both steady state and during transient operation. The results are compared to curves generated by an exact simulation of the carrier-flow equations and it is determined that the carrier lifetime varies inversely as the 0.3 power of the doping. A study is also made on the effect that gold doping, platinum doping, and electron irradiation have on the carrier distributions under both steady-state and open-circuit decay conditions. These results are analyzed in view of measurements of the switching behavior in these devices made at the device terminals.