Electrical conductivity, dielectric properties and structure of GeSe3Sb2Se3-ZnSe thin films

• Published in: Thin solid films Vol. 542; pp. 310 - 316
• Main Authors: Balboul, M.R., Hosni, H.M., Roushdy, M., Fayek, S.A.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 02-09-2013; Elsevier
• Subjects: Alternating current; Chalcogenide glasses; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity; Dielectric constants; Dielectric properties; Direct current; Electrical conductivity; Electrical properties of specific thin films; Electrical resistivity; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Evaporation; Exact sciences and technology; Physics; Resistivity; Thin films; X-ray diffraction; Zinc selenides; Conductivity; X-ray diffraction; Evaporation; Chalcogenide glasses; Dielectric constants; Temperature dependence; Frequency dependence; Electrical conductivity; Electrical properties; Dielectric properties; Zinc selenides; XRD; Chalcogenides; Thin films; Dielectric losses; Antimony selenides; Permittivity; Activation energy; X-ray diffraction analysis
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.06.095

Electrical conductivity and dielectric properties of the chalcogenides GeSe3, Sb2Se3, ZnSe, (GeSe3)80(Sb2Se3)20 and (GeSe3)70(Sb2Se3)10(ZnSe)20 thin films are investigated. The effect of ZnSe incorporation with both GeSe3, Sb2Se3 results in amorphous (GeSe3)70(Sb2Se3)10(ZnSe)20 composition as obtained from the X-ray diffraction analysis. The estimated DC activation energy, ΔEDC, in the temperature range from 300 to 373K is found to decrease from 0.72eV for (GeSe3)80(Sb2Se3)20 to 0.65eV for (GeSe3)70(Sb2Se3)10(ZnSe)20. However, the estimated AC activation energy, ΔEAC, over the same temperature range and a frequency range from 0.6 to 1000kHz, exhibits an opposite trend as its values increase for (GeSe3)70(Sb2Se3)10(ZnSe)20 as compared with that of (GeSe3)80(Sb2Se3)20 composition. Dielectric constant, ε1, and dielectric loss, ε2, behaviour are investigated as well over the same ranges of temperature and frequency.
•GeSe3-Sb2Se3-ZnSe thin films were prepared by thermal evaporation technique.•The DC and the AC properties of the thin films were investigated.•Dielectric properties of the studied samples were extracted from AC conductivity.