Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser

InGaAs-GaAs-AlGaAs strained-layer distributed-feedback (DFB) ridge-waveguide lasers requiring a single metalorganic chemical vapor deposition (MOCVD) growth step are shown to operate in a single longitudinal mode up to 2.2*I/sub th/ with an antireflection (AR) coating applied to one facet under room...

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Bibliographic Details

Published in:	IEEE photonics technology letters Vol. 4; no. 4; pp. 296 - 299
Main Authors:	Miller, L.M., Beernink, K.J., Verdeyen, J.T., Coleman, J.J., Hughes, J.S., Smith, G.M., Honig, J., Cockerill, T.M.
Format:	Journal Article
Language:	English
Published:	IEEE 01-04-1992
Subjects:	Chemical lasers Chemical vapor deposition Coatings Laser modes MOCVD Optical devices Optical pulses Pulsed laser deposition Stimulated emission Temperature
Online Access:	Get full text
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