Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser

• Published in: IEEE photonics technology letters Vol. 4; no. 4; pp. 296 - 299
• Main Authors: Miller, L.M., Beernink, K.J., Verdeyen, J.T., Coleman, J.J., Hughes, J.S., Smith, G.M., Honig, J., Cockerill, T.M.
• Format: Journal Article
• Language: English
• Published: IEEE 01-04-1992
• Subjects: Chemical lasers; Chemical vapor deposition; Coatings; Laser modes; MOCVD; Optical devices; Optical pulses; Pulsed laser deposition; Stimulated emission; Temperature
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.127192

InGaAs-GaAs-AlGaAs strained-layer distributed-feedback (DFB) ridge-waveguide lasers requiring a single metalorganic chemical vapor deposition (MOCVD) growth step are shown to operate in a single longitudinal mode up to 2.2*I/sub th/ with an antireflection (AR) coating applied to one facet under room temperature, pulsed conditions. A value of kL=0.33 has been determined from threshold gain calculations for coated and uncoated devices. Weak lateral optical confinement, provided by unpumped lateral gratings is demonstrated by the absence of antiguiding effects, and a real lateral index step of approximately 4*10/sup -3/ is determined from near-field emission patterns.< >