A Nitrogen Dioxide Sensor Based on an Organic Transistor Constructed from Amorphous Semiconducting Polymers

A Nitrogen Dioxide Sensor Based on an Organic Transistor Constructed from Amorphous Semiconducting Polymers

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Bibliographic Details
Published in:Advanced materials (Weinheim) Vol. 19; no. 22; pp. 4018 - 4023
Main Authors: Das, A., Dost, R., Richardson, T., Grell, M., Morrison, J. J., Turner, M. L.
Format: Journal Article
Language:English
Published: Weinheim WILEY-VCH Verlag 19-11-2007
Subjects:
Amorphous materials
Field-effect transistors
gas
organic
Semiconductors
Sensors
Online Access:Get full text
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Description
Bibliography:UK Home Office
ark:/67375/WNG-6F9P54C3-H
We wish to acknowledge financial support by the UK Home Office.
istex:DC1E8BB37CAA7E6047F94B9E346CC9419FBAB700
ArticleID:ADMA200701504
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200701504