Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering

Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering

The magnetoresistance of single-layer graphene on a Si/SiO 2 substrate is measured in the temperature range of 2.5–150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical...

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Bibliographic Details
Published in:JETP letters Vol. 96; no. 7; pp. 471 - 474
Main Authors: Vasil’eva, G. Yu, Alekseev, P. S., Ivanov, Yu. L., Vasil’ev, Yu. B., Smirnov, D., Schmidt, H., Haug, R. J., Gouider, F., Nachtwei, G.
Format: Journal Article
Language:English
Published: Dordrecht SP MAIK Nauka/Interperiodica 01-12-2012
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Condensed Matter
Molecular
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Information Technology
Solid State Physics
Spintronics
Landau Level
JETP Letter
Gate Voltage
Single Layer Graphene
Dirac Point
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Summary:The magnetoresistance of single-layer graphene on a Si/SiO 2 substrate is measured in the temperature range of 2.5–150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364012190137