On the modification of a model of minority charge-carrier diffusion in semiconductor materials based on the use of recursive trigonometric functions and the estimation of the stability of solutions for the modified model

A modified model of the diffusion of minority charge carriers generated by a broad electron beam in semiconductor materials is proposed. New methods for the approximation of step functions are used, and an estimate of the stability of solutions to the diffusion equation is obtained for this model.

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Bibliographic Details
Published in:	Surface investigation, x-ray, synchrotron and neutron techniques Vol. 8; no. 5; pp. 922 - 925
Main Authors:	Seregina, E. V., Stepovich, M. A., Makarenkov, A. M.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-09-2014
Subjects:	Chemistry and Materials Science Materials Science Surfaces and Interfaces Thin Films Neutron Technique Semiconductor Material GaAs Surface Investigation Diffusion Equation
Online Access:	Get full text
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Description
Summary:	A modified model of the diffusion of minority charge carriers generated by a broad electron beam in semiconductor materials is proposed. New methods for the approximation of step functions are used, and an estimate of the stability of solutions to the diffusion equation is obtained for this model.
ISSN:	1027-4510 1819-7094
DOI:	10.1134/S1027451014050188