Relaxation of optically stimulated resistance of thin SnO2 films

The results of investigation of the effect of irradiation with photons from an L5013VC violet light-emitting diode (LED) with the wavelength of 400 nm and power of 76 mW on the resistance of the sensitive layer of SnO 2 -based test structures of gas sensors in air before and after the high-temperatu...

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 43; no. 6; pp. 782 - 786
Main Authors:	Russkih, D. V., Rembeza, S. I.
Format:	Journal Article
Language:	English
Published:	Dordrecht SP MAIK Nauka/Interperiodica 01-06-2009
Subjects:	Magnetic Materials Magnetism Physics Physics and Astronomy Physics of Semiconductor Devices 85.30.Hi 07.07.Df 72.20.Jv
Online Access:	Get full text
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Summary:	The results of investigation of the effect of irradiation with photons from an L5013VC violet light-emitting diode (LED) with the wavelength of 400 nm and power of 76 mW on the resistance of the sensitive layer of SnO 2 -based test structures of gas sensors in air before and after the high-temperature stabilizing annealing are presented. The features in the variation of the SnO 2 -layer resistance in time are established when the LED is switched on and off.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782609060189