AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 μm) IR photodetectors

• Published in: Technical physics letters Vol. 38; no. 5; pp. 436 - 438
• Main Authors: Butyagin, O. F., Katsavets, N. I., Kogan, I. V., Krasovitsky, D. M., Kulikov, V. B., Chalyi, V. P., Dudin, A. L., Cherednichenko, O. B.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-05-2012
• Subjects: Classical and Continuum Physics; Physics; Physics and Astronomy; Nonequilibrium Carrier; Dark Current Density; GaAs; Technical Physic Letter; Intersubband Transition
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785012050045

We have studied AlGaAs/GaAs multiquantum-well heterostructures grown by molecular beam epitaxy in an STE-3532 setup (SemiTEq, St. Petersburg), which are intended for long-wavelength IR photodetectors operating on inter-subband transitions. Quantum wells (QWs) in the obtained heterostructures are highly homogeneous and possess sharp heteroboundaries, which is confirmed by the photoluminescence spectra and dark current-voltage characteristics of photodetectors based on these heterostructures. The photodetectors exhibit sensitivity in the atmospheric transparency window (8–10 mm) and possess parameters that make possible their use in large-format photodetector arrays for a new generation of long-wavelength IR camera systems.