On a modified projection scheme of the least-squares method for the modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material
A modified projection scheme of the least-squares method is considered for modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material. The order estimate is given, and the condition for the computational stability of the proposed mo...
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Published in: | Surface investigation, x-ray, synchrotron and neutron techniques Vol. 7; no. 6; pp. 1077 - 1080 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
Moscow
Pleiades Publishing
01-11-2013
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Subjects: | |
Online Access: | Get full text |
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Summary: | A modified projection scheme of the least-squares method is considered for modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material. The order estimate is given, and the condition for the computational stability of the proposed modified projection scheme is obtained in the form of the limiting relation. |
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ISSN: | 1027-4510 1819-7094 |
DOI: | 10.1134/S1027451013060177 |