Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

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Bibliographic Details
Published in:Microelectronic engineering Vol. 147; pp. 59 - 62
Main Authors: Gonzalez, M.B., Martin-Martinez, J., Rodriguez, R., Acero, M.C., Nafria, M., Campabadal, F., Aymerich, X.
Format: Journal Article
Language:English
Published: 01-11-2015
Online Access:Get full text
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Description
ISSN:0167-9317
DOI:10.1016/j.mee.2015.04.046