Tunable far-infrared photovoltaic response in semiconductor field-effect devices

In semiconductor field-effect devices with quasi-two-dimensional electron channels we observe a novel resonant photovoltaic response to the high-power radiation of a far-infrared free-electron laser. A fast photovoltaic signal occurs when a laser pulse is resonantly absorbed by a plasmon in the two-...

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Bibliographic Details
Published in:	Applied physics letters Vol. 54; no. 2; pp. 131 - 133
Main Authors:	BATKE, E, KAMINSKY, J, KOTTHAUS, J. P, SPECTOR, J
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 09-01-1989
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Photoconduction and photovoltaic effects; photodielectric effects Physics Far infrared radiation Photovoltaic effect Semiconductor materials Plasmon Two dimensional model Experimental study Electron gas
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Summary:	In semiconductor field-effect devices with quasi-two-dimensional electron channels we observe a novel resonant photovoltaic response to the high-power radiation of a far-infrared free-electron laser. A fast photovoltaic signal occurs when a laser pulse is resonantly absorbed by a plasmon in the two-dimensional electron system. The plasmon frequency and hence the resonant photovoltaic response can be voltage tuned via field effect.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.101206